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| Product Data Sheet 2-20 GHz Wideband AGC Amplifier TGA1342-SCC May 28, 2004 Key Features and Performance * * * * * * 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.4 x 2.0 x 0.1 mm Primary Applications Chip Dimensions: 3.4 x 2.0 x 0.1 mm * * * Wideband Gain Block / LN Amplifier X-Ku Point to Point Radio IF & LO Buffer Applications Description The TriQuint TGA1342-SCC is a monolithic dual gate low noise distributed amplifier with AGC via the control gate. This LNA operates from 2 to 20 GHz. Nine 120um gatewidth FETs typically provide 3.5 dB of noise figure, 17.5 dBm of output power at 1 dB gain compression, and 9 dB small signal gain. Typical input return loss and output return loss are 20 dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA1342SCC low noise distributed amplifier is suitable for a commercial radio and variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. The TGA1342-SCC is supplied in chip form and is assembled using automated equipment. Typical Electrical Characteristics Vd = 6V, Id = 60mA, Vg = -0.8V, Vctrl = 0V 12 11 Gain (dB) 10 9 8 7 6 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 6.0 Noise Figure (dB) 5.0 4.0 3.0 2.0 1.0 0.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 9V -5V TO 0V 220 mA 8.73 mA 23 dBm 2.16W 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ V I + 4/ | IG | PIN PD TCH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced from 3.7E+11 to 1.9E+8 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. 0 3/ 4/ 5/ TABLE II DC PROBE TESTS (100%) (T A = 25 C + 5 C) NOTES SYMBOL MIN I DSS1 G M1 97 130 0.5 6 6 LIMITS MAX 292 280 2.1 30 30 UNITS mA mS V V V 1/ 1/ 1/ 1/ |V P| |V BVGD1| |V BVGS1| V P, V BVGD , and V BVGS are negative. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC TABLE III RF CHARACTERISTICS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS Vd=6V, Id=60mA MIN 9 8 VALUE TYP MAX UNITS 1/ Small Signal Gain Magnitude F = 2 - 14 GHz F = 16 - 20 GHz dB dB dB Power Output @ 1 dB Gain Compression 2/ Noise Figure F = 2 - 20 GHz 17.5 dBm F = 2 GHz F = 4 - 15 GHz F = 18 GHz 5.5 4.5 5.5 -10 -12 -10 dB dB dB dB dB dB 1/ Input Return Loss Magnitude F = 2 GHz F = 4 - 18 GHz F = 20 GHz 1/ Output Return Loss Magnitude F = 2- 20 GHz -10.5 dB 1/ 2/ RF probe data is taken at 2 GHz steps from 2-20 GHz RF probe data is taken at 2 GHz steps from 2-6 GHz, 3 GHz steps from 9-18 GHz, and at 20GHz. TABLE IV THERMAL INFORMATION* PARAMETER RJC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd = 6 V ID = 60 mA Pdiss = 0.36 W T CH (OC) 81.30 RTJC (qC/W) 31.388 TM (HRS) 3.7E+11 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC Typical On-Wafer Electrical Characteristics Vd=6V, Id=60mA, Room Temperature 12.0 11.5 11.0 5th 10th 10.5 Gain (dB) 20th 30th 40th 10.0 50th 60th 70th 9.5 80th 90th 95th 9.0 8.5 8.0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GH z ) 5.5 5 4.5 4 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th 3.5 NF (dB) 3 2.5 2 1.5 1 0.5 0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz ) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC Typical On-Wafer Electrical Characteristics Vd=6V, Id=60mA, Room Temperature -10 -12 -14 -16 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th -18 IRL (dB) -20 -22 -24 -26 -28 -30 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) -10 -12 -14 -16 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th -18 ORL (dB) -20 -22 -24 -26 -28 -30 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz ) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC Mechanical Characteristics GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet TGA1342-SCC Chip Assembly and Bonding Diagram Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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